 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDD6670AL May 2004 FDD6670AL 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features * 84 A, 30 V. RDS(ON) = 5 m @ VGS = 10 V RDS(ON) = 6 m @ VGS = 4.5 V * Low gate charge * Fast switching * High performance trench technology for extremely low RDS(ON) Applications * DC/DC converter * Motor Drives D G S D I-PAK (TO-251AA) GDS G D-PAK TO-252 (TO-252) S TA=25oC unless otherwise noted Absolute Maximum Ratings Symbo l VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Ratings 30 20 84 100 83 3.8 1.6 -55 to +175 Units V A W TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 1.8 40 96 C/W Package Marking and Ordering Information Device Marking FDD6670AL Device FDD6670AL Package D-PAK (TO-252) Reel Size 13'' Tape width 12mm Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDD6670AL Rev C (W) FDD6670AL Electrical Characteristics Symbol WDSS IAR TA = 25C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions Single Pulse, VDD = 15 V, ID = 21A Min Typ Max Units 370 21 mJ A V 24 10 100 1 1.8 -5 4 5 6 50 88 3 mV/C A nA Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) VGS = 0 V, ID = 250 A 30 ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 18 A ID = 16.5 A VGS = 4.5 V, VGS = 10 V, ID = 18 A, TJ=125C VGS = 10 V, VDS = 5 V, VDS = 15 V, f = 1.0 MHz VDS = 5 V ID = 18 A V GS = 0 V, V mV/C 5 6 10 m ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd A S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) 3845 930 368 pF pF pF 27 23 99 58 56 ns ns ns ns nC nC nC VGS = 15 mV, VDD = 15 V, VGS = 10 V, f = 1.0 MHz ID = 1 A, RGEN = 6 1.2 Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 15 13 62 36 VDS = 15V, VGS = 5 V ID = 18 A, 37 10 14 FDD6670AL Rev C (W) FDD6670AL Electrical Characteristics (continued) Symbol VSD trr Qrr TA = 25C unless otherwise noted Parameter Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Test Conditions VGS = 0 V, IS = 3.2 A (Note 2) Min Typ Max Units 0.7 39 31 1.2 V nS nC Drain-Source Diode Characteristics and Maximum Ratings IF = 18 A ,diF/dt = 100 A/s Notes:8 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 40C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6670AL Rev C (W) FDD6670AL Typical Characteristics 100 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 4.5V 1.8 4.0V 3.5V VGS = 3.5V ID, DRAIN CURRENT (A) 80 1.6 60 1.4 4.0V 1.2 4.5V 5.0V 6.0V 1 10V 40 3.0V 20 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 20 40 60 80 100 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.012 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o ID =18A VGS = 10V ID = 9 A 0.01 0.008 TA = 125oC 0.006 TA = 25oC 0.004 0.002 125 150 175 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 80 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V VDS = 5V ID, DRAIN CURRENT (A) 60 10 1 TA = 125oC 25oC 40 0.1 0.01 0.001 0.0001 -55oC TA = 125oC 20 25oC -55oC 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6670AL Rev C (W) FDD6670AL Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID =18A 8 VDS = 10V 20V 15V 5000 f = 1MHz VGS = 0 V 4000 CAPACITANCE (pF) CISS 3000 6 4 2000 COSS 1000 CRSS 2 0 0 20 40 Qg, GATE CHARGE (nC) 60 80 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 1000 P(pk), PEAK TRANSIENT POWER (W) 100 Figure 8. Capacitance Characteristics SINGLE PULSE RJA = 96C/W TC = 25C ID, DRAIN CURRENT (A) 100 100s RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s VGS = 10V SINGLE PULSE RJA = 96oC/W TC = 25oC DC 80 10 60 1 40 0.1 20 0.01 0.01 0.1 1 10 100 0 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 RJAt) = r(t) * RJA RJA = 96 C/W P(pk) t1 SINGLE PULSE 0.01 0.02 0.01 0.001 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.0001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6670AL Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC Across the board. Around the world.TM OPTOPLANARTM PACMANTM The Power Franchise POPTM Programmable Active DroopTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11 |
Price & Availability of FDD6670AL
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |